features broadband 0.5 - 16ghz low insertion loss; 4db typ at 8ghz attenuation 0.5db steps to 31.5db fast switching speed through gaas vias for improved performance description the P35-4304-000-200 is a high performance gallium arsenide monolithic 6 bit digital attenuator offering an attenuation range of 31.5db in 0.5db steps. it is suitable for use in broadband communications, instrumentation and electronic warfare applications. the attenuator is controlled by the application of complimentary 0v/-5v or 0/-8v signals to the control lines in accordance with the truth table below. the full attenuation range is achieved by modifying the control lines in combination. the die is fabricated using moc's 0.5 m m gate length mesfet process (s20). it is fully protected using silicon nitride passivation for excellent performance and reliability. electrical performance ambient temperature = 223c , z o = 50 w , control voltages = 0v/-5v unless otherwise stated notes insertion loss measured in low loss state. 6 bit digital attenuator, 0.5 - 16ghz P35-4304-000-200 marconi optical components parameter conditions min typ max units insertion loss 1 0.5 - 8ghz - 4 5 db (reference state) 8ghz - 16ghz - 5 6 db attenuation range 0.5 - 16ghz - 31.5 - db step size 0.5 - 16ghz - 0.5 - db attenuation accuracy 0.5 - 8ghz - - 0.3 3% db 8 - 12ghz - - 0.5 10% db 12 - 16ghz - - 0.5 15% db input return loss 0.5 - 16ghz 10 20 - db output return loss 0.5 - 16ghz 10 20 - db input power @ p-1db point 0.5 - 16ghz - 18 - dbm switching speed 50% control to 10%90%rf - 5 10 ns
typical performance at 22c absolute maximum ratings max control voltage -8v max i/p power +25 dbm operating temperature -60c to +125c storage temperature -65c to +150c attenuator schematic 0/0.5db attenuation 0/1db attenuation 0/2db attenuation 0/4db attenuation 0/8db attenuation 0/16db attenuation a1 a1 rf in rf out a3 a4 a5 a6 b1 b2 b3 b4 b5 b6 attenuation - cardinal states attenuation - all states nominal attenuation
P35-4304-000-200 marconi optical components chip outline pad details pad function 1 rf input 2 b5 3 a5 4 a2* 5 b2* 6 a4 7 b4 8 b6* 9 a6* 10 b1 11 a1 12 a3* 13 b3* 14 rf output 15 b3* 16 a3* 17 a6* 18 b6* 19 b2* 20 a2* die size: 3.45 x 1.42mm bond pad size 120 m m x 120 m m die thickness: 200 m m * note option of alternative bond pads on opposite side of die control line attenuation 0.5db bit 1db bit 2db bit 4db bit 8db bit 16db bit a1 b1 a2 b2 a3 b3 a4 b4 a5 b5 a6 b6 0v -5v 0v -5v 0v -5v 0v -5v 0v -5v 0v -5v reference -5v 0v 0v -5v 0v -5v 0v -5v 0v -5v 0v -5v +0.5db 0v -5v -5v 0v 0v -5v 0v -5v 0v -5v 0v -5v +1db 0v -5v 0v -5v -5v 0v 0v -5v 0v -5v 0v -5v +2db 0v -5v 0v -5v 0v -5v -5v 0v 0v -5v 0v -5v +4db 0v -5v 0v -5v 0v -5v 0v -5v -5v 0v 0v -5v +8db 0v -5v 0v -5v 0v -5v 0v -5v 0v -5v -5v 0v +16db switching truth table handling, mounting and bonding instructions the back of the die is gold metallized and can be die-attached manually onto gold, eutectically with au-sn (80:20) or with low temperature conductive epoxy. the maximum allowable die temperature is 310c for 2 minutes. bonds should be made onto the exposed gold pads with 17 or 25 microns pure gold or half-hard gold wire. bonding should be achieved with the die face at 225c to 275c with a heated thermosonic wedge (approx. 125c) and a maximum force of 60 grams. ball bonds may be used but care must be taken to ensure the ball size is compatible with the bonding pads shown. the length of the bond wires should be minimised to reduce parasitic inductance, particularly those to the rf and ground pads.
the data and product specifications are subject to change without notice. these devices should not be used for device qualification and production without prior notice. ? marconi optical components ltd 2001 www.moc.marconi.com moc, caswell, towcester, northants, nn12 8eq, tel:+44 1327 356468 fax +44 1327 356698 462/sm/02427/200 issue 1/1 ordering information: P35-4304-000-200
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